Chin. J. Semicond. > 1994, Volume 15 > Issue 3 > 180-187

CONTENTS

适用于宽温度范围和不同沟遭掺杂浓度的MOSFET反型层载流子迁移率模型

黄骁虎,阮刚

PDF

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2527 Times PDF downloads: 1313 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 March 1994

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Export: BibTex EndNote
      Citation:


      Export: BibTex EndNote

      • Received Date: 2015-08-18

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return