Chin. J. Semicond. > 2006, Volume 27 > Issue 10 > 1800-1803

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An X-Band PHEMT MMIC Power Amplifier

Zhang Shujing, Yang Ruixia, Wu Jibin and Yang Kewu

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Abstract: This paper describes the design,fabrication,and performance of an X-band 8 W AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier.With a two-stage topology design,this amplifier is designed to fully match a 50Ω input and output impedance.The area of chip is 4.5mm×3mm.With 7.5V and 1.5A DC bias conditions,an output power of 8W,power added efficiency of 30%,and power gain of 15dB are achieved.

Key words: PHEMTX-bandMMICpower amplifier

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    Received: 18 August 2015 Revised: 31 May 2006 Online: Published: 01 October 2006

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      Zhang Shujing, Yang Ruixia, Wu Jibin, Yang Kewu. An X-Band PHEMT MMIC Power Amplifier[J]. Journal of Semiconductors, 2006, In Press. Zhang S J, Yang R X, Wu J B, Yang K W. An X-Band PHEMT MMIC Power Amplifier[J]. Chin. J. Semicond., 2006, 27(10): 1800.Export: BibTex EndNote
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      Zhang Shujing, Yang Ruixia, Wu Jibin, Yang Kewu. An X-Band PHEMT MMIC Power Amplifier[J]. Journal of Semiconductors, 2006, In Press.

      Zhang S J, Yang R X, Wu J B, Yang K W. An X-Band PHEMT MMIC Power Amplifier[J]. Chin. J. Semicond., 2006, 27(10): 1800.
      Export: BibTex EndNote

      An X-Band PHEMT MMIC Power Amplifier

      • Received Date: 2015-08-18
      • Accepted Date: 2006-03-31
      • Revised Date: 2006-05-31
      • Published Date: 2006-10-12

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