Chin. J. Semicond. > 2005, Volume 26 > Issue 2 > 324-328

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Abstract: 采用直流磁控溅射法制备TiO2薄膜,在不同温度下对薄膜进行退火,研究了薄膜晶体结构随退火温度的转化情况.对TiO2薄膜氧敏器件特性进行了测试,结果表明,在400℃下灵敏度随氧分压增加最快,并且在400℃具有最高的灵敏度.得到的激活能为0.41eV,并对TiO2薄膜氧敏器件的氧敏可逆性进行了讨论.

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2005

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      TiO2薄膜制备及其氧敏特性[J]. Journal of Semiconductors, 2005, In Press. TiO2薄膜制备及其氧敏特性[J]. Chin. J. Semicond., 2005, 26(2): 324.Export: BibTex EndNote
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      TiO2薄膜制备及其氧敏特性[J]. Journal of Semiconductors, 2005, In Press.

      TiO2薄膜制备及其氧敏特性[J]. Chin. J. Semicond., 2005, 26(2): 324.
      Export: BibTex EndNote

      TiO2薄膜制备及其氧敏特性

      • Received Date: 2015-08-19

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