Chin. J. Semicond. > 2005, Volume 26 > Issue S1 > 70-73

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Homoepitaxial Growth and Properties of 4H-SiC by Chemical Vapor Deposition

Gao Xin, Sun Guosheng, Li Jinmin, Zhao Wanshun, Wang Lei, Zhang Yongxing and Zeng Yiping

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Abstract: 4H-SiC(0001) epilayers are grown on 8° off-axis 4H-SiC (0001) substrates by an atmosphere pressure chemical vapor deposition system.Hall measurements show that the unintentionally-doped epilayers are n-type conductive.XRD shows that a single peak in all the samples appears at 2θ=35.5° ,indicating single crystal nature of the epilayers.In lowtemperature photoluminescence,the sample grown at lower temperature exhibits a broad peak at 1.8~2.4eV.In room-temperature Raman spectra,the typical 3C-SiC feature peaks are observed in the same sample,indicating the existence of cubic SiC inclusion,which is in accordance with the photoluminescence result.

Key words: SiCCVDRamanPL

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Gao Xin, Sun Guosheng, Li Jinmin, Zhao Wanshun, Wang Lei, Zhang Yongxing, Zeng Yiping. Homoepitaxial Growth and Properties of 4H-SiC by Chemical Vapor Deposition[J]. Journal of Semiconductors, 2005, In Press. Gao X, Sun G S, Li J M, Zhao W S, Wang L, Zhang Y X, Zeng Y P. Homoepitaxial Growth and Properties of 4H-SiC by Chemical Vapor Deposition[J]. Chin. J. Semicond., 2005, 26(13): 70.Export: BibTex EndNote
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      Gao Xin, Sun Guosheng, Li Jinmin, Zhao Wanshun, Wang Lei, Zhang Yongxing, Zeng Yiping. Homoepitaxial Growth and Properties of 4H-SiC by Chemical Vapor Deposition[J]. Journal of Semiconductors, 2005, In Press.

      Gao X, Sun G S, Li J M, Zhao W S, Wang L, Zhang Y X, Zeng Y P. Homoepitaxial Growth and Properties of 4H-SiC by Chemical Vapor Deposition[J]. Chin. J. Semicond., 2005, 26(13): 70.
      Export: BibTex EndNote

      Homoepitaxial Growth and Properties of 4H-SiC by Chemical Vapor Deposition

      • Received Date: 2015-08-19

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