Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 486-488

Room Temperature Continuous Wave Quantum Well Lasers

Zhao Huan, Du Yun, Ni Haiqiao, Zhang Shiyong, Han Qin, Xu Yingqiang, Niu Zhichuan and Wu Ronghan

+ Author Affiliations

PDF

Abstract: Investigations of in-situ and ex-situ annealing effects on GaInNAs(Sb)/GaNAs/GaAs quantum wells (Qws) laser diodes grown by molecular beam epitaxy are carried out systematically.The crystal quality of QWs can be improved effective. 1y by rapid thermal annealing.Few investigations were made for lasers especially at a wavelength of 1.55pm.The emission wavelength of those QWs lasers,which were grown by MBE using low growth rates and introducing in-situ annealing process during the growth,has been extended up over 1.55um. A 1.59um lasing of a GalnNAsSb/GaNAs/GaAs single quantum well laser diode is obtained under continuous current injection at room temperature.The threshold current density is 2.6kA/cm2.

Key words: molecular beam epitaxyrapid thermal annealingquantum well

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2019 Times PDF downloads: 370 Times Cited by: 0 Times

    History

    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhao Huan, Du Yun, Ni Haiqiao, Zhang Shiyong, Han Qin, Xu Yingqiang, Niu Zhichuan, Wu Ronghan. Room Temperature Continuous Wave Quantum Well Lasers[J]. Journal of Semiconductors, 2007, In Press. Zhao H, Du Y, Ni H Q, Zhang S Y, Han Q, Xu Y Q, Niu Z C, Wu R H. Room Temperature Continuous Wave Quantum Well Lasers[J]. Chin. J. Semicond., 2007, 28(S1): 486.Export: BibTex EndNote
      Citation:
      Zhao Huan, Du Yun, Ni Haiqiao, Zhang Shiyong, Han Qin, Xu Yingqiang, Niu Zhichuan, Wu Ronghan. Room Temperature Continuous Wave Quantum Well Lasers[J]. Journal of Semiconductors, 2007, In Press.

      Zhao H, Du Y, Ni H Q, Zhang S Y, Han Q, Xu Y Q, Niu Z C, Wu R H. Room Temperature Continuous Wave Quantum Well Lasers[J]. Chin. J. Semicond., 2007, 28(S1): 486.
      Export: BibTex EndNote

      Room Temperature Continuous Wave Quantum Well Lasers

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return