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Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells

Cao Meng, Wu Huizhen, Lao Yanfeng, Huang Zhanchao, Liu Cheng, Zhang Jun and Jiang Shan

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Abstract: To investigate the ICP etching damage to InAsP/InP strained multiple quantum wells,specially designed InAsP/InP strained multiple quantum wells (SMQWs) are grown using gas source molecular beam epitaxy and etched by an inductively coupled plasma.The depth of damage in the SMQW structure is about 40nm after etching for 75nm.This is determined by measuring the photo-luminescence spectra of the sample before and after etching.This result is in good agreement with the theoretical damage depth of 43.5nm by M.Rahman’s model.It is found that the defects are mainly caused by ion channeling.

Key words: dry etchingstrained multiple quantum wellsPL spectradamage

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2006

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      Cao Meng, Wu Huizhen, Lao Yanfeng, Huang Zhanchao, Liu Cheng, Zhang Jun, Jiang Shan. Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells[J]. Journal of Semiconductors, 2006, In Press. Cao M, Wu H Z, Lao Y F, Huang Z C, Liu C, Zhang J, Jiang S. Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells[J]. Chin. J. Semicond., 2006, 27(1): 178.Export: BibTex EndNote
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      Cao Meng, Wu Huizhen, Lao Yanfeng, Huang Zhanchao, Liu Cheng, Zhang Jun, Jiang Shan. Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells[J]. Journal of Semiconductors, 2006, In Press.

      Cao M, Wu H Z, Lao Y F, Huang Z C, Liu C, Zhang J, Jiang S. Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells[J]. Chin. J. Semicond., 2006, 27(1): 178.
      Export: BibTex EndNote

      Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells

      • Received Date: 2015-08-20

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