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Data Retention in EEPROM Cells

Cheng Wei, Hao Yue, Ma Xiaohua and Liu Hongxia

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Abstract: We present a theoretical and experimental investigation of the date retention ability of EEPROM cells at a given voltage.An expression for EEPROM data retention is derived.The electrical characteristics are presented.The result shows that the data retention time varies linearly with the applied voltage in a log-log plot.Under the assumption that the charge loss mechanism is Fowler-Nordheim tunneling through the thin oxide,the data retention time of EEPROM cells is derived,and the experience formula is checked by experiment.

Key words: EEPROMcharge retentionthreshold voltageFowler-Nordheim

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2006

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      Cheng Wei, Hao Yue, Ma Xiaohua, Liu Hongxia. Data Retention in EEPROM Cells[J]. Journal of Semiconductors, 2006, In Press. Cheng W, Hao Y, Ma X H, Liu H X. Data Retention in EEPROM Cells[J]. Chin. J. Semicond., 2006, 27(7): 1290.Export: BibTex EndNote
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      Cheng Wei, Hao Yue, Ma Xiaohua, Liu Hongxia. Data Retention in EEPROM Cells[J]. Journal of Semiconductors, 2006, In Press.

      Cheng W, Hao Y, Ma X H, Liu H X. Data Retention in EEPROM Cells[J]. Chin. J. Semicond., 2006, 27(7): 1290.
      Export: BibTex EndNote

      Data Retention in EEPROM Cells

      • Received Date: 2015-08-20

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