| Citation: |
Li Deyao, Huang Yongzhen, Zhang Shuming, Chong Ming, Ye Xiaojun, Zhu Jianjun, Zhao Degang, Chen Lianghui, Yang Hui, Liang Junwu. Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics[J]. Journal of Semiconductors, 2006, In Press.
Li D Y, Huang Y Z, Zhang S M, Chong M, Ye X J, Zhu J J, Zhao D G, Chen L H, Yang H, Liang J W. Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics[J]. Chin. J. Semicond., 2006, 27(3): 499.
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Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics
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Abstract
Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model.A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage.The temperature step is thought to have a strong influence on the characteristics of the laser diodes.Time-resolved measurements of light-current curves,spectra,and the far-field pattern of the InGaN laser diodes under pulsed operation are performed.The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency. -
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