Abstract: Using Fe(NO3)3 as an oxidant and several selected corrosive inhibitors,the corrosive efficiency of slurries is investigated on a deposited copper wafer with a surface roughness of 1.42nm .The electrochemical behavior of the slurry is investigated by potentiodynamic polarization studies.The inhibition efficiency of the related corrosive inhibitors is calculated from the polarization data.The static etching rate and the polishing material removal rate are obtained.Atom force microscopy is used to measure the surface topography of corrosive copper film and the value of surface roughness is obtained by the ZYGO surface meters.The result shows that the benzotriazole (BTA) is a perfect corrosive inhibitor for the copper slurry.The inhibitor efficiency of the 1.5wt% Fe(NO3)3+ 0.1wt%BTA is 99.1% according to the potentiodynamic parameters.Either in the etching state or the polishing state,BTA has perfect ability to protect the surface of the copper wafer from corrosion.

Key words: ULSI,  CMP,  slurry,  inhibitor