| Citation: |
Xia Changsheng, Li Zhifeng, Wang Chong, Chen Xiaoshuang, Lu Wei. Ray Tracing Simulation of InGaN/GaN Light-Emitting Diodes with Parabolic Substrates[J]. Journal of Semiconductors, 2006, In Press.
Xia C S, Li Z F, Wang C, Chen X S, Lu W. Ray Tracing Simulation of InGaN/GaN Light-Emitting Diodes with Parabolic Substrates[J]. Chin. J. Semicond., 2006, 27(1): 100.
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Ray Tracing Simulation of InGaN/GaN Light-Emitting Diodes with Parabolic Substrates
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Abstract
A new kind of InGaN/GaN light-emitting diode with a parabolic substrate is proposed with special attention to the photon emitted into the substrate.Ray trace,the angular distribution of emitted power,and the external quantum efficiency for plane and parabolic InGaN/GaN light-emitting diodes are simulated and calculated preliminarily.The results show that the parabolic InGaN/GaN light-emitting diode can emit better quasi-parallel light than that with a plane substrate and can effectively utilize the photon emitted into the substrate,resulting in an increase in the emitted power in the forward direction by 12.6 times and an improvement in the external quantum efficiency by 1.22 times.-
Keywords:
- InGaN/GaN LED,
- ray trace,
- external quantum efficiency
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References
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