Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 205-207

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Development of a Stripe Gate Power MOSFET

Wang Lixin, Liao Taiyi and Lu Jiang

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Abstract: A new planar stripe gate power MOSFET is developed.It has a lower RDS(ON),a higher switch speed and better operation stability compared to traditional cell design.Its manufacture flow is also presented,which is simple and practicable.

Key words: stripe gateVDMOSpower MOSFET

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

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      Wang Lixin, Liao Taiyi, Lu Jiang. Development of a Stripe Gate Power MOSFET[J]. Journal of Semiconductors, 2006, In Press. Wang L X, Liao T Y, Lu J. Development of a Stripe Gate Power MOSFET[J]. Chin. J. Semicond., 2006, 27(13): 205.Export: BibTex EndNote
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      Wang Lixin, Liao Taiyi, Lu Jiang. Development of a Stripe Gate Power MOSFET[J]. Journal of Semiconductors, 2006, In Press.

      Wang L X, Liao T Y, Lu J. Development of a Stripe Gate Power MOSFET[J]. Chin. J. Semicond., 2006, 27(13): 205.
      Export: BibTex EndNote

      Development of a Stripe Gate Power MOSFET

      • Received Date: 2015-08-20

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