| Citation: |
Jiang Yulong, Ru Guoping, Qu Xinping, Li Bingzong. Influence of Ti Interlayer on Untrathin Ni Film Silicidation[J]. Journal of Semiconductors, 2005, In Press.
Jiang Y L, Ru G P, Qu X P, Li B Z. Influence of Ti Interlayer on Untrathin Ni Film Silicidation[J]. Chin. J. Semicond., 2005, 26(13): 45.
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Influence of Ti Interlayer on Untrathin Ni Film Silicidation
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Abstract
Ultra thin Ni(5nm) film and Ni(5nm)/Ti(1nm) complex film are deposited on various Si substrates by ion beam sputtering,followed by rapid thermal annealing for solid state silicidation.Four point probe method,micro-Raman scattering spectroscopy,and Auger electron spectroscopy are employed to investigate the influence of Ti interlayer on Ni/Si reaction.Experimental results show that the Ti interlayer will retard the formation of NiSi.-
Keywords:
- silicide,
- NiSi,
- solid-state reaction
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References
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Proportional views
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