Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 239-244

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Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure

Fu Zhuxi, Sun Xiankai, Zhu Junjie and Lin Bixia

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Abstract: The photoluminescence (PL) and Raman spectra of undoped ZnO films deposited directly on Si substrate (sample A),on Si substrate through a SiC buffer layer (sample B),and on a ZnO crystal wafer (sample C) are investigated.There are emission peaks centered at 3.18eV (ultraviolet,UV) and 2.38eV (green) in these samples.Comparing the Raman spectra and the variation of the PL peak intensities with annealing atmosphere,we conclude that the luminescence of the samples is related to the tensile strain in the ZnO film due to the lattice mismatch between the film and the substrate.In particular,the tensile strain reduces the formation energy of OZn antisite oxygen defects,which generate the green emission center.After annealing in oxygen-rich atmosphere,many OZn defects are generated.Thus,the intensity of green emission in ZnO/Si hetero-structure materials increases due to tensile strain in ZnO films.

Key words: ZnO/Si hetero-structureluminescencelattice mismatchbiaxial tensile strain

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2006

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      Fu Zhuxi, Sun Xiankai, Zhu Junjie, Lin Bixia. Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure[J]. Journal of Semiconductors, 2006, In Press. Fu Z X, Sun X K, Zhu J J, Lin B X. Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure[J]. Chin. J. Semicond., 2006, 27(2): 239.Export: BibTex EndNote
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      Fu Zhuxi, Sun Xiankai, Zhu Junjie, Lin Bixia. Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure[J]. Journal of Semiconductors, 2006, In Press.

      Fu Z X, Sun X K, Zhu J J, Lin B X. Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure[J]. Chin. J. Semicond., 2006, 27(2): 239.
      Export: BibTex EndNote

      Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure

      • Received Date: 2015-08-20

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