Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 260-262
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MOCVD Growth of InN Films on Sapphire Substrates

Xiao Hongling, Wang Xiaoliang, Yang Cuibai, Hu Guoxin, Ran Junxue, Wang Cuimei, Zhang Xiaobin, Li Jianping and Li Jinmin

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Abstract: InN films with undoped-GaN buffer layer were successfully grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) on (0001) sapphire substrate.No indium droplets on the surface of the grown InN films.Atomic force microscopy and double·crystal X-ray diffraction (DCXRD) were used to characterize the InN films.The results show that the InN films have good crystallinity，with full width at half maximum (FWHM) InN(0002) DCXRD peak of 9.187. The room temperature Hall mobility of the films is 696cm2/(v·s).

Key words: InN, MOCVD, FWHM, mobility

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 260-262
      Xiao Hongling, Wang Xiaoliang, Yang Cuibai, Hu Guoxin, Ran Junxue, Wang Cuimei, Zhang Xiaobin, Li Jianping, Li Jinmin. MOCVD Growth of InN Films on Sapphire Substrates[J]. Journal of Semiconductors, 2007, In Press. Xiao H L, Wang X L, Yang C B, Hu G X, Ran J X, Wang C M, Zhang X B, Li J P, Li J M. MOCVD Growth of InN Films on Sapphire Substrates[J]. Chin. J. Semicond., 2007, 28(S1): 260.Export: BibTex EndNote
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      Xiao Hongling, Wang Xiaoliang, Yang Cuibai, Hu Guoxin, Ran Junxue, Wang Cuimei, Zhang Xiaobin, Li Jianping, Li Jinmin. MOCVD Growth of InN Films on Sapphire Substrates[J]. Journal of Semiconductors, 2007, In Press.

      Xiao H L, Wang X L, Yang C B, Hu G X, Ran J X, Wang C M, Zhang X B, Li J P, Li J M. MOCVD Growth of InN Films on Sapphire Substrates[J]. Chin. J. Semicond., 2007, 28(S1): 260.
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      MOCVD Growth of InN Films on Sapphire Substrates

      • Materials Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Materials Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Materials Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Materials Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Materials Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Materials Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Materials Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Materials Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China and Materials Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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