| Citation: |
Bai Yu, Khizar-ul-Haq, M.A.Khan, Jiang Xueyin, Zhang Zhilin. OTFT with Bilayer Gate Insulator and Modificative Electrode[J]. Journal of Semiconductors, 2008, In Press.
Bai Y, Khizar-ul-Haq, M.A.Khan, Jiang X Y, Zhang Z L. OTFT with Bilayer Gate Insulator and Modificative Electrode[J]. J. Semicond., 2008, 29(4): 650.
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OTFT with Bilayer Gate Insulator and Modificative Electrode
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Abstract
An organic thin-film transistor (OTFT) with an OTS/SiO2 bilayer gate insulator and a MoO3/Al electrode configuration between gate insulator and source/drain electrodes has been investigated.A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine(CuPc) is used as an active layer.This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility,reduces the threshold voltage,and improves the on/off ratio simultaneously.The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage.Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance. -
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