Chin. J. Semicond. > 2000, Volume 21 > Issue 10 > 974-978
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Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy

张伟 , 潘钟 , 李联合 , 王学宇 and 林耀望

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Key words: GaInNAs/GaAs

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(10): 974-978
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      • Received Date: 2015-08-20

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