| Citation: |
He Jia, Sun Lingling, Liu Jun. Agilent HBT Model Parameters Extraction Procedure For InP HBT’[J]. Journal of Semiconductors, 2007, In Press.
He J, Sun L L, Liu J. Agilent HBT Model Parameters Extraction Procedure For InP HBT’[J]. Chin. J. Semicond., 2007, 28(S1): 443.
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Agilent HBT Model Parameters Extraction Procedure For InP HBT’
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Abstract
This paper introduces the methodology to extract the parameters of Agilent HBT large signal model，which succee· ded to and ireproved the traditional extract methodology of Gummel.Pooh and VBIC models，and the extract technique about distributed capacitance，intrinsic resistances and transit time parameters.At last，we measured and simulated the single·finger InP HBT device。extracted the parameters of Agilent HBT model.The experimentation results verify that，this model has a high precision for InP HBTs’DC characterizations，and within the frequency range from 50MHz to 25GHz，it is also suitable for AC small-signal characterizations’representation.-
Keywords:
- Agilent HBT,
- InP,
- large-signal,
- model
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References
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