| Citation: |
Yi Xiaoyan, Ma Long, Guo Jinxia, Wang Liangchen, Li Jinmin. Investigation of p-Electrode in High Power GaN-LED Application[J]. Journal of Semiconductors, 2005, In Press.
Yi X Y, Ma L, Guo J X, Wang L C, Li J M. Investigation of p-Electrode in High Power GaN-LED Application[J]. Chin. J. Semicond., 2005, 26(13): 161.
Export: BibTex EndNote
|
Investigation of p-Electrode in High Power GaN-LED Application
-
Abstract
The performance including contact resistance,reflectivity, and current spreading of several types of ohmic contacts to p-GaN is analyzed,such as Ni/Au/Ag,ITO/Ag,Ag, etc.Based on this data all kinds of p-electrode designs used in high power flip-chip LED are achieved.The mechanism of ohmic contact for the Ni/Au/p-GaN degrades under long-time high-temperature working,so low-resistance,high-reflectivity, and thermally stable ohmic contacts on p-GaN using Ru and Ir are proposed.-
Keywords:
- high power,
- flip-chip,
- LED,
- p electrode,
- high reflectivity,
- contact resistance
-
References
-
Proportional views
DownLoad: