Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 402-406

High Quality AIGaN/GaN HEMT Materials Grown on SiC Substrates

Wang Xiaoliang, Wang Cuimei, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Ran Junxue, Luo Weijun, Tang Jian, Li Jianping, Li Jinmin and Wang Zhanguo

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Abstract: High quality A1GaN/GaN HEMT materials were successfully fabricated on 4H.and 6H.SiC substrates bv MoCVD method.High electron mobility and density of 2215cm2/(V·s) and 1.044×10^13cm-2 were obtained at room temperature. Average sheet resistance lower than 253.7n/口 and resistance uniformity better than 2.02% were also realized on the 2-inch HEMT wafers.TCXRD and AFM measurements showed that the HEMT material has a high crystal quality and smooth sur. face morphology. Power devices with gate width of lmm were fabricated using the HEMT wafers.At 8GHz,the output power density is 8.25W/mm and the associated PAE is 39.4%. The output power was reduced only 0.1dBm after half an hour, sug gesting the device has a comparatively high reliability.

Key words: AIGaN/GaNHEMTMOCVDpower device

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Wang Xiaoliang, Wang Cuimei, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Ran Junxue, Luo Weijun, Tang Jian, Li Jianping, Li Jinmin, Wang Zhanguo. High Quality AIGaN/GaN HEMT Materials Grown on SiC Substrates[J]. Journal of Semiconductors, 2007, In Press. Wang X L, Wang C M, Hu G X, Ma Z Y, Xiao H L, Ran J X, Luo W J, Tang J, Li J P, Li J M, Wang Z G. High Quality AIGaN/GaN HEMT Materials Grown on SiC Substrates[J]. Chin. J. Semicond., 2007, 28(S1): 402.Export: BibTex EndNote
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      Wang Xiaoliang, Wang Cuimei, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Ran Junxue, Luo Weijun, Tang Jian, Li Jianping, Li Jinmin, Wang Zhanguo. High Quality AIGaN/GaN HEMT Materials Grown on SiC Substrates[J]. Journal of Semiconductors, 2007, In Press.

      Wang X L, Wang C M, Hu G X, Ma Z Y, Xiao H L, Ran J X, Luo W J, Tang J, Li J P, Li J M, Wang Z G. High Quality AIGaN/GaN HEMT Materials Grown on SiC Substrates[J]. Chin. J. Semicond., 2007, 28(S1): 402.
      Export: BibTex EndNote

      High Quality AIGaN/GaN HEMT Materials Grown on SiC Substrates

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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