Chin. J. Semicond. > 2006, Volume 27 > Issue 11 > 1961-1965

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Measurement of Thermal Conductivity of Ultra-Thin Single Crystal Silicon Film Using Symmetric Structure

Zhang Hao, Lü Zhichao, Tian Lilin, 谭志敏 , Tan Zhimin and Liu Litian

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Abstract: The traditional steady-state joule heating method is improved by inducing a symmetric structure,and a thermal isolation trench is added in suspended Si membrane.The novel measurement structure is optimized using ANSYS tools.A large reduction in thermal conductivity resulting from phonon boundary scattering is observed.The lateral thermal conductivity of the 50nm and 80nm Si films at a temperature of 293K are measured to 32 and 38W/(m·K),respectively,which,compared to the bulk value of 148W/(m·K),agree well with the prediction of the BTE equation.

Key words: ultra-thin single crystal layerthermal conductivitysteady-state joule heating

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    Received: 18 August 2015 Revised: Online: Published: 01 November 2006

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      Zhang Hao, Lü Zhichao, Tian Lilin, Tan Zhimin, Liu Litian. Measurement of Thermal Conductivity of Ultra-Thin Single Crystal Silicon Film Using Symmetric Structure[J]. Journal of Semiconductors, 2006, In Press. Zhang H, Lü Z, Tian L L, Tan Z M, Liu L T. Measurement of Thermal Conductivity of Ultra-Thin Single Crystal Silicon Film Using Symmetric Structure[J]. Chin. J. Semicond., 2006, 27(11): 1961.Export: BibTex EndNote
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      Zhang Hao, Lü Zhichao, Tian Lilin, Tan Zhimin, Liu Litian. Measurement of Thermal Conductivity of Ultra-Thin Single Crystal Silicon Film Using Symmetric Structure[J]. Journal of Semiconductors, 2006, In Press.

      Zhang H, Lü Z, Tian L L, Tan Z M, Liu L T. Measurement of Thermal Conductivity of Ultra-Thin Single Crystal Silicon Film Using Symmetric Structure[J]. Chin. J. Semicond., 2006, 27(11): 1961.
      Export: BibTex EndNote

      Measurement of Thermal Conductivity of Ultra-Thin Single Crystal Silicon Film Using Symmetric Structure

      • Received Date: 2015-08-18

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