| Citation: |
Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong, Sun Ming. A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs[J]. Journal of Semiconductors, 2008, In Press.
Lü H, Zhang Y M, Zhang Y M, Che Y, Sun M. A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs[J]. J. Semicond., 2008, 29(3): 458.
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A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs
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Abstract
We investigate the effects of the surface states on the Schottky contacts in 4H-SiC MESFET.The Ti/Pt/Au gate metal contacts are deposited by electron beam evaporation and patterned by a lift-off process.Based on thermionic theory,a simple parameter extraction method is developed for determination of the surface states in metal/4H-SiC Schottky contacts.The interface state density and interface capacitance are calculated to be 4.386e13cm-2·eV-1 and 6.394e-6F/cm2,which are consistent with the device’s terminal characteristics.-
Keywords:
- silicon carbide,
- Schottky contact,
- surface states,
- device modeling.
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References
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