| Citation: |
Zhu Min, Yin Junjian, Zhang Haiying. A Monolithic InGaP/GaAs HBT Power Amplifier Design with Improved Gain Flatness[J]. Journal of Semiconductors, 2008, In Press.
Zhu M, Yin J J, Zhang H Y. A Monolithic InGaP/GaAs HBT Power Amplifier Design with Improved Gain Flatness[J]. J. Semicond., 2008, 29(8): 1441.
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A Monolithic InGaP/GaAs HBT Power Amplifier Design with Improved Gain Flatness
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Abstract
A monolithic power amplifier designed for 3GHz communication applications with improved gain flatness is studied based on InGaP/GaAs hetero-junction bipolar transistor technology in a commercial foundry.To improve gain flatness in a simple way,no external component was used in the real circuit except the decoupled bypass capacitors and RF choke.The measured linear gain is 23dB with gain flatness of ±0.25dB,satisfying the design goal and matching well with simulation results.This 2-stage power amplifier can deliver 31dBm linear output power and 44% power-added efficiency in the 400MHz bandwidth.The successful design with improved gain flatness is the result of superior distortion compensation and a coil model used as the RF choke.-
Keywords:
- power amplifier,
- MMIC,
- HBT
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References
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Proportional views
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