High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Journal of Semiconductors, 2005, In Press. W X feng, Z Y ping, W B qiang, Z Z ping, D X qing, L Min, and Chang Benkang and C B kang. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Chin. J. Semicond., 2005, 26(9): 1692.Export: BibTex EndNote
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High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Journal of Semiconductors, 2005, In Press.
W X feng, Z Y ping, W B qiang, Z Z ping, D X qing, L Min, and Chang Benkang and C B kang. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Chin. J. Semicond., 2005, 26(9): 1692.
Export: BibTex EndNote
|
High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Journal of Semiconductors, 2005, In Press. W X feng, Z Y ping, W B qiang, Z Z ping, D X qing, L Min, and Chang Benkang and C B kang. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Chin. J. Semicond., 2005, 26(9): 1692.Export: BibTex EndNote
| Citation:
|
High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Journal of Semiconductors, 2005, In Press.
W X feng, Z Y ping, W B qiang, Z Z ping, D X qing, L Min, and Chang Benkang and C B kang. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Chin. J. Semicond., 2005, 26(9): 1692.
Export: BibTex EndNote
|
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