Chin. J. Semicond. > 2005, Volume 26 > Issue 12 > 2378-2384

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Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

Liu Zhe, Wang Junxi, Li Jinmin, Liu Hongxin, Wang Qiyuan, Wang Jun, Zhang Nanhong, Xiao Hongling, Wang Xiaoliang and Zeng Yiping

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Abstract: Crack-free GaN epilayers on Si(001) substrates are obtained by molecular beam epitaxy with novel γ-Al2O3 materials as intermediate layers.GaN growth along c-director is realized and a hexagonal single crystalline GaN is achieved.Experimental results indicate that pretreatment with Al and a high temperature AlN layer can improve the quality of GaN and a low temperature AlN layer can improve the surface roughness of GaN.This provides an effective method to overcome the difficulties of GaN growth on Si(001) substrates.

Key words: GaNγ-Al2O3/Si(001)bufferMBE

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Liu Zhe, Wang Junxi, Li Jinmin, Liu Hongxin, Wang Qiyuan, Wang Jun, Zhang Nanhong, Xiao Hongling, Wang Xiaoliang, Zeng Yiping. Growth of GaN on γ-Al2O3/Si(001) Composite Substrates[J]. Journal of Semiconductors, 2005, In Press. Liu Z, Wang J X, Li J M, Liu H X, Wang Q Y, Wang J, Zhang N H, Xiao H L, Wang X L, Zeng Y P. Growth of GaN on γ-Al2O3/Si(001) Composite Substrates[J]. Chin. J. Semicond., 2005, 26(12): 2378.Export: BibTex EndNote
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      Liu Zhe, Wang Junxi, Li Jinmin, Liu Hongxin, Wang Qiyuan, Wang Jun, Zhang Nanhong, Xiao Hongling, Wang Xiaoliang, Zeng Yiping. Growth of GaN on γ-Al2O3/Si(001) Composite Substrates[J]. Journal of Semiconductors, 2005, In Press.

      Liu Z, Wang J X, Li J M, Liu H X, Wang Q Y, Wang J, Zhang N H, Xiao H L, Wang X L, Zeng Y P. Growth of GaN on γ-Al2O3/Si(001) Composite Substrates[J]. Chin. J. Semicond., 2005, 26(12): 2378.
      Export: BibTex EndNote

      Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

      • Received Date: 2015-08-19

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