Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 378-380

PAPERS

Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction

Zhang Lin, Zhang Yimen, Zhang Yuming and Tang Xiaoyan

+ Author Affiliations

PDF

Abstract: A novel SiC ohmic contact of n+ polysilicon/n+ SiC heterojunction is simulated with the numerical simulator ISE TCAD.The simulated results show that the n+ polysilicon/n+ SiC heterojunction can form excellent ohmic contact and has the advantages of simple process and excellent performance.

Key words: SiC ohmic contact poly-silicon heterojunction

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 3508 Times PDF downloads: 1576 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhang Lin, Zhang Yimen, Zhang Yuming, Tang Xiaoyan. Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction[J]. Journal of Semiconductors, 2006, In Press. Zhang L, Zhang Y M, Zhang Y M, Tang X Y. Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction[J]. Chin. J. Semicond., 2006, 27(13): 378.Export: BibTex EndNote
      Citation:
      Zhang Lin, Zhang Yimen, Zhang Yuming, Tang Xiaoyan. Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction[J]. Journal of Semiconductors, 2006, In Press.

      Zhang L, Zhang Y M, Zhang Y M, Tang X Y. Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction[J]. Chin. J. Semicond., 2006, 27(13): 378.
      Export: BibTex EndNote

      Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return