J. Semicond. > 2008, Volume 29 > Issue 7 > 1347-1349

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Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD

Li Zheyang, Dong Xun, Zhang Lan, Chen Gang, Bai Song and Chen Chen

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Abstract: 4H-SiC films were grown on 75mm Si-face n-type substrates 4° off-oriented towards the 〈1120〉 direction using a horizontal hot-wall CVD system.Optical and atomic force microscopy results revealed the main defects observed were typical 4° off-large carrots,triangles,and a few down-falls.The most observable feature was the step bunching.By optimizing the process conditions,a low sigma/mean(σ/mean) value of 4.37% and 1.81% in doping concentration and thickness uniformity were obtained on the epitaxy films,respectively.

Key words: horizontal hot-wall CVD4H-SiChomoepitaxyuniformity

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    Received: 18 August 2015 Revised: 14 December 2007 Online: Published: 01 July 2008

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      Li Zheyang, Dong Xun, Zhang Lan, Chen Gang, Bai Song, Chen Chen. Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD[J]. Journal of Semiconductors, 2008, In Press. Li Z Y, Dong X, Zhang L, Chen G, Bai S, Chen C. Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD[J]. J. Semicond., 2008, 29(7): 1347.Export: BibTex EndNote
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      Li Zheyang, Dong Xun, Zhang Lan, Chen Gang, Bai Song, Chen Chen. Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD[J]. Journal of Semiconductors, 2008, In Press.

      Li Z Y, Dong X, Zhang L, Chen G, Bai S, Chen C. Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD[J]. J. Semicond., 2008, 29(7): 1347.
      Export: BibTex EndNote

      Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-13
      • Revised Date: 2007-12-14
      • Published Date: 2008-08-01

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