Chin. J. Semicond. > 2006, Volume 27 > Issue 10 > 1804-1807

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Ku-Band 20W GaAs Power PHEMT

Zhong Shichang and Chen Tangsheng

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Abstract: A GaAs power PHEMT with a dielectric-assisted T-shaped gate is reported.The gate length and the dimension of the gate head can be controlled in the T-shaped gate processing,and good process controllability and high yield can be achieved.GaAs power PHEMTs with a gate width of 19.2mm and Ku-band internally matched transistors with the combination of two chips are developed.The high power device demonstrates an output power of 20W with a power gain of 6dB and a typical power-added efficiency of 31% across the band of 14.0~14.5GHz.

Key words: T-shaped gateGaAsPHEMTinternal matching

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    Received: 18 August 2015 Revised: 26 May 2006 Online: Published: 01 October 2006

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      Zhong Shichang, Chen Tangsheng. Ku-Band 20W GaAs Power PHEMT[J]. Journal of Semiconductors, 2006, In Press. Zhong S C, Chen T S. Ku-Band 20W GaAs Power PHEMT[J]. Chin. J. Semicond., 2006, 27(10): 1804.Export: BibTex EndNote
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      Zhong Shichang, Chen Tangsheng. Ku-Band 20W GaAs Power PHEMT[J]. Journal of Semiconductors, 2006, In Press.

      Zhong S C, Chen T S. Ku-Band 20W GaAs Power PHEMT[J]. Chin. J. Semicond., 2006, 27(10): 1804.
      Export: BibTex EndNote

      Ku-Band 20W GaAs Power PHEMT

      • Received Date: 2015-08-18
      • Accepted Date: 2006-02-19
      • Revised Date: 2006-05-26
      • Published Date: 2006-10-12

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