Chin. J. Semicond. > 2003, Volume 24 > Issue 7 > 673-679

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一种用于分离pMOS器件热载流子应力下氧化层陷阱电荷和界面陷阱电荷对阈值电压退化作用的方法(英文)

杨国勇 , 王金延 , 霍宗亮 , 毛凌锋 , 谭长华 and 许铭真

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Key words: MOS器件, 氧化层陷阱, 界面陷阱, 热载流子退化, 阈值电压

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(7): 673-679
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      • Received Date: 2015-08-20

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