Chin. J. Semicond. > 2003, Volume 24 > Issue 9 > 977-982

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Key words: SOI, 电阻场板, 横向双扩散MOS管, 埋氧层, 电离率, 击穿电压, 比导通电阻

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2003

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      • Received Date: 2015-08-20

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