| Citation: |
Zhang Yuezong, Feng Shiwei, Zhang Gongchang, Wang Chengdong, Lü Changzhi. High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN[J]. Journal of Semiconductors, 2007, In Press.
Zhang Y Z, Feng S W, Zhang G C, Wang C D, Lü C. High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN[J]. Chin. J. Semicond., 2007, 28(6): 984.
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High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN
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Abstract
The high temperature characteristics of the ohmic contact of Ti/Al/Ni/Au (15nm/220nm/40nm/50nm) multilayer contacts to n-type GaN(Nd=3.7e17cm-3,Nd=3.0e18cm-3) are studied.The annealed samples still show excellent ohmic contact characteristics at 500℃.Contact resistivity increases with the rise of temperature.Furthermore,the tendency of increase is related to doping concentration:The higher the doping concentration,the slower the increase of the contact resistivity with the temperature.Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN has better high temperature reliability.The contact resistivity shows unrecoverable characteristics after the samples are placed under the thermal stress. -
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