J. Semicond. > 2008, Volume 29 > Issue 3 > 563-565

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Influence of Etching Depth on Characteristics of GaN/Si Blue LEDs

Zhang Ping, Liu Junlin, Zheng Changda and Jiang Fengyi

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Abstract: We transfer GaN based LED epitaxial materials grown on a Si substrate to a new Si substrate and fabricate flip blue LED chips.Photoelectric properties of these chips with different n-electrode etching depths are researched.An accelerated aging experiment on a testing board is studied under a high driven current of 500mA for the chips of 200μm×200μm before incised.The results show that the chips with 0.8 and 1.2μm etching depths have lower forward voltage and slower light decay than the chips with 0.5μm etching depth.Meanwhile,the ESD is relatively steadier with aging time.Additionally,the ESD of chips with 0.8μm etching depth is larger than the chips with 1.2μm.

Key words: blue LEDGaNSi substrateaccelerated agingetchingelectrostatic discharge

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    Received: 18 August 2015 Revised: 05 December 2007 Online: Published: 01 March 2008

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      Zhang Ping, Liu Junlin, Zheng Changda, Jiang Fengyi. Influence of Etching Depth on Characteristics of GaN/Si Blue LEDs[J]. Journal of Semiconductors, 2008, In Press. Zhang P, Liu J L, Zheng C D, Jiang F Y. Influence of Etching Depth on Characteristics of GaN/Si Blue LEDs[J]. J. Semicond., 2008, 29(3): 563.Export: BibTex EndNote
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      Zhang Ping, Liu Junlin, Zheng Changda, Jiang Fengyi. Influence of Etching Depth on Characteristics of GaN/Si Blue LEDs[J]. Journal of Semiconductors, 2008, In Press.

      Zhang P, Liu J L, Zheng C D, Jiang F Y. Influence of Etching Depth on Characteristics of GaN/Si Blue LEDs[J]. J. Semicond., 2008, 29(3): 563.
      Export: BibTex EndNote

      Influence of Etching Depth on Characteristics of GaN/Si Blue LEDs

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-05
      • Revised Date: 2007-12-05
      • Published Date: 2008-02-28

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