J. Semicond. > 2008, Volume 29 > Issue 5 > 869-874

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An Analytical Model of Drain Current for Ultra-Thin Body and Double-Gate Schottky Source/Drain MOSFETs Accounting for Quantum Effects

Luan Suzhen, Liu Hongxia, Jia Renxu, Cai Naiqiong, Wang Jin and Kuang Qianwei

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Abstract: A compact drain current including the variation of barrier heights and carrier quantization in ultrathin-body and double-gate Schottky barrier MOSFETs (UTBDG SBFETs) is developed.In this model,Schrodinger's equation is solved using the triangular potential well approximation.The carrier density thus obtained is included in the space charge density to obtain quantum carrier confinement effects in the modeling of thin-body devices.Due to the quantum effects,the first subband is higher than the conduction band edge,which is equivalent to the band gap widening.Thus,the barrier heights at the source and drain increase and the carrier concentration decreases as the drain current decreases.The drawback of the existing models,which cannot present an accurate prediction of the drain current because they mainly consider the effects of Schottky barrier lowering (SBL) due to image forces,is eliminated.Our research results suggest that for small nonnegative Schottky barrier (SB) heights,even for zero barrier height,the tunneling current also plays a role in the total on-state currents.Verification of the present model was carried out by the device numerical simulator-Silvaco and showed good agreement.

Key words: Schottky barrierquantum effectsthe effective masselectron density

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    Received: 18 August 2015 Revised: 10 December 2007 Online: Published: 01 May 2008

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      Luan Suzhen, Liu Hongxia, Jia Renxu, Cai Naiqiong, Wang Jin, Kuang Qianwei. An Analytical Model of Drain Current for Ultra-Thin Body and Double-Gate Schottky Source/Drain MOSFETs Accounting for Quantum Effects[J]. Journal of Semiconductors, 2008, In Press. Luan S Z, Liu H X, Jia R X, Cai N Q, Wang J, Kuang Q W. An Analytical Model of Drain Current for Ultra-Thin Body and Double-Gate Schottky Source/Drain MOSFETs Accounting for Quantum Effects[J]. J. Semicond., 2008, 29(5): 869.Export: BibTex EndNote
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      Luan Suzhen, Liu Hongxia, Jia Renxu, Cai Naiqiong, Wang Jin, Kuang Qianwei. An Analytical Model of Drain Current for Ultra-Thin Body and Double-Gate Schottky Source/Drain MOSFETs Accounting for Quantum Effects[J]. Journal of Semiconductors, 2008, In Press.

      Luan S Z, Liu H X, Jia R X, Cai N Q, Wang J, Kuang Q W. An Analytical Model of Drain Current for Ultra-Thin Body and Double-Gate Schottky Source/Drain MOSFETs Accounting for Quantum Effects[J]. J. Semicond., 2008, 29(5): 869.
      Export: BibTex EndNote

      An Analytical Model of Drain Current for Ultra-Thin Body and Double-Gate Schottky Source/Drain MOSFETs Accounting for Quantum Effects

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-16
      • Revised Date: 2007-12-10
      • Published Date: 2008-05-05

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