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Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Wang Wei, Sun Jianping and Gu Ning

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Abstract: A quantum model based on solutions to the Schrdinger-Poisson equations is developed to investigate the device behavior related to gate tunneling current for nanoscale MOSFETs with high-k gate stacks.This model can model various MOS device structures with combinations of high-k dielectric materials and multilayer gate stacks,revealing quantum effects on the device performance.Comparisons are made for gate current behavior between nMOSFET and pMOSFET high-k gate stack structures.The results presented are consistent with experimental data,whereas a new finding for an optimum nitrogen content in HfSiON gate dielectric requires further experimental verifications.

Key words: high-k gate current quantum model

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    Received: 18 August 2015 Revised: 29 March 2006 Online: Published: 01 July 2006

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      Wang Wei, Sun Jianping, Gu Ning. Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks[J]. Journal of Semiconductors, 2006, In Press. Wang W, Sun J P, Gu N. Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks[J]. Chin. J. Semicond., 2006, 27(7): 1170.Export: BibTex EndNote
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      Wang Wei, Sun Jianping, Gu Ning. Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks[J]. Journal of Semiconductors, 2006, In Press.

      Wang W, Sun J P, Gu N. Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks[J]. Chin. J. Semicond., 2006, 27(7): 1170.
      Export: BibTex EndNote

      Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

      • Received Date: 2015-08-18
      • Accepted Date: 2006-01-24
      • Revised Date: 2006-03-29
      • Published Date: 2006-10-12

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