| Citation: |
Li Jiaye, Zhao Yongmei, Liu Xingfang, Sun Guosheng, Luo Muchang, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Jinmin. Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD[J]. Journal of Semiconductors, 2007, In Press.
Li J Y, Zhao Y M, Liu X F, Sun G S, Luo M C, Wang L, Zhao W S, Zeng Y P, Li J M. Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD[J]. Chin. J. Semicond., 2007, 28(1): 1.
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Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD
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Abstract
50mm 3C-SiC epilayers are grown on (100) and (111) Si substrates in a newly developed horizontal low-pressure hot-wall CVD reactor under different growth pressures and flow rates of H2 carrier gas.The structure,electrical properties,and thickness uniformity of the 3C-SiC epilayers are investigated by X-ray diffraction (XRD),sheet resistance measurement,and spectroscopic ellipsometry.XRD patterns show that the 3C-SiC films have excellent crystallinity.The narrowest full widths at half maximum of the SiC(200) and (111) peaks are 0.41° and 0.21°,respectively.The best electrical uniformity of the 50mm 3C-SiC films obtained by sheet resistance measurement is 2.15%.A σ/mean value of ±5.7% in thickness uniformity is obtained.-
Keywords:
- 3C-SiC,
- heteroepitaxial growth,
- horizontal hot-wall CVD,
- uniformity
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References
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Proportional views
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