J. Semicond. > 2008, Volume 29 > Issue 7 > 1263-1267

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1/fγ Noise Characteristics of an n-MOSFET Under DC Hot Carrier Stress

Liu Yu'an and Yu Xiaoguang

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Abstract: The 1/fγ noise characteristic parameterSfγ model in an n-MOSFET under DC hot carrier stress is studied.A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented.The hot carrier degradation effect of n-MOSFET in high-,mid-,and low gate stresses and its 1/fγ noise feature are studied.Experimental results agree well with the developed model.

Key words: n-MOSFEThot carrier1/fγ noise

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    Received: 18 August 2015 Revised: 27 January 2008 Online: Published: 01 July 2008

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      Liu Yu'an, Yu Xiaoguang. 1/fγ Noise Characteristics of an n-MOSFET Under DC Hot Carrier Stress[J]. Journal of Semiconductors, 2008, In Press. Liu Y, Yu X G. 1/fγ Noise Characteristics of an n-MOSFET Under DC Hot Carrier Stress[J]. J. Semicond., 2008, 29(7): 1263.Export: BibTex EndNote
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      Liu Yu'an, Yu Xiaoguang. 1/fγ Noise Characteristics of an n-MOSFET Under DC Hot Carrier Stress[J]. Journal of Semiconductors, 2008, In Press.

      Liu Y, Yu X G. 1/fγ Noise Characteristics of an n-MOSFET Under DC Hot Carrier Stress[J]. J. Semicond., 2008, 29(7): 1263.
      Export: BibTex EndNote

      1/fγ Noise Characteristics of an n-MOSFET Under DC Hot Carrier Stress

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-31
      • Revised Date: 2008-01-27
      • Published Date: 2008-07-04

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