Chin. J. Semicond. > 2006, Volume 27 > Issue 5 > 765-768

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Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs

Yang Wei, Liu Xunchun, Zhu Min, Wang Runmei and Shen Huajun

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Abstract: The alloy temperature dependence of Voffset and Rcontact is studied,and an optimal alloy temperature range for the best trade-off between Voffset and Rcontact is given for thin base HBTs.In addition,the reason for the high Voffset at high alloy temperature is interpreted using Schottky clamped theory.The lower Voffset of our U-shaped emitter HBT than that of traditional strip emitter HBTs is explained.

Key words: heterojunction bipolar transistor U-shaped emitter alloy offset voltage

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2006

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      Yang Wei, Liu Xunchun, Zhu Min, Wang Runmei, Shen Huajun. Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs[J]. Journal of Semiconductors, 2006, In Press. Yang W, Liu X C, Zhu M, Wang R M, Shen H J. Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs[J]. Chin. J. Semicond., 2006, 27(5): 765.Export: BibTex EndNote
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      Yang Wei, Liu Xunchun, Zhu Min, Wang Runmei, Shen Huajun. Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs[J]. Journal of Semiconductors, 2006, In Press.

      Yang W, Liu X C, Zhu M, Wang R M, Shen H J. Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs[J]. Chin. J. Semicond., 2006, 27(5): 765.
      Export: BibTex EndNote

      Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs

      • Received Date: 2015-08-20

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