| Citation: |
Zhang Jinmin, Xie Quan, Zeng Wuxian, Liang Yan, Zhang Yong, Yu Ping, Tian Hua. Effects of Annealing on Atomic Interdiffusion and Microstructures in Fe/Si Systems[J]. Journal of Semiconductors, 2007, In Press.
Zhang J M, Xie Q, Zeng W X, Liang Y, Zhang Y, Yu P, Tian H. Effects of Annealing on Atomic Interdiffusion and Microstructures in Fe/Si Systems[J]. Chin. J. Semicond., 2007, 28(12): 1888.
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Effects of Annealing on Atomic Interdiffusion and Microstructures in Fe/Si Systems
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Abstract
Pure metal Fe films with thickness of about 100nm were deposited on Si (100) substrates by DC magnetron sputtering.Annealing was subsequently performed in a vacuum furnace in the temperature range of 600~1000℃ for 2h.The samples were characterized by means of Rutherford backscattering (RBS) with 3MeV carbon ions.The RBS data were fitted with SIMNRA 60,and the results show the atomic interdiffusion in Fe/Si systems.The microstructures and crystal structures were characterized by scanning electron microscope and X-ray diffraction.The effects of annealing on atomic interdiffusion,silicide formation,and microstructures in Fe/Si systems were analyzed.-
Keywords:
- magnetron sputtering,
- annealing,
- RBS,
- atomic interdiffusion,
- microstructure
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References
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Proportional views
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