Chin. J. Semicond. > 2004, Volume 25 > Issue 6 > 741-744

CONTENTS

磁控溅射金属预置层后硒化法制备CuInSe_2薄膜工艺条件的优化

汤会香 , 严密 , 张辉 , 张加友 , 孙云 , 薛玉明 and 杨德仁

PDF

Key words: 正交实验, CuInSe2薄膜, 优化制备

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2587 Times PDF downloads: 1014 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 June 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Export: BibTex EndNote
      Citation:


      Export: BibTex EndNote

      • Received Date: 2015-08-19

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return