Chin. J. Semicond. > 2006, Volume 27 > Issue 10 > 1755-1758

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Properties of Strong-Coupling Excitons in Semiconductor Quantum Dots

Li Zhixin and Xiao Jinglin

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Abstract: The properties of strong-coupling excitons in semiconductor quantum dots are investigated using the linear combination operator and unitary transformation methods.The ground state energy of the heavy-hole exciton is obtained under the effective-mass approximation.The influences of the radius of the quantum dots and the confinement strength on the ground state energy of the strong-coupling exciton in the semiconductor quantum dots are discussed in the case of strong-coupling.Numerical calculations are performed for a TlCl semiconductor.Our results illustrate that the energy of the ground state heavy-hole exciton decreases with the increase of the radius of the quantum dots and increases with the increase of the confinement strength ω0 of quantum dots.

Key words: semiconductor quantum dotexcitonlinear combinationstrong-coupling

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    Received: 18 August 2015 Revised: 15 April 2006 Online: Published: 01 October 2006

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      Li Zhixin, Xiao Jinglin. Properties of Strong-Coupling Excitons in Semiconductor Quantum Dots[J]. Journal of Semiconductors, 2006, In Press. Li Z X, Xiao J L. Properties of Strong-Coupling Excitons in Semiconductor Quantum Dots[J]. Chin. J. Semicond., 2006, 27(10): 1755.Export: BibTex EndNote
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      Li Zhixin, Xiao Jinglin. Properties of Strong-Coupling Excitons in Semiconductor Quantum Dots[J]. Journal of Semiconductors, 2006, In Press.

      Li Z X, Xiao J L. Properties of Strong-Coupling Excitons in Semiconductor Quantum Dots[J]. Chin. J. Semicond., 2006, 27(10): 1755.
      Export: BibTex EndNote

      Properties of Strong-Coupling Excitons in Semiconductor Quantum Dots

      • Received Date: 2015-08-18
      • Accepted Date: 2006-01-19
      • Revised Date: 2006-04-15
      • Published Date: 2006-10-12

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