Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 92-95

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Abstract: 采用发射极基极金属自对准工艺,成功研制出了InGaP/GaAs功率HBT.发射极尺寸为(3μm×15μm)×16的功率器件的截止频率和最高振荡频率分别为55GHz和35GHz.在片load-pull测试表明:当工作频率为1GHz时,器件工作在AB类,该功率管最大输出功率为23.5dBm,最大功率附加效率达60%,P1dB的输出功率为21dBm,对应增益为16dB,工作电压为3.5V.

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

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      高功率附加效率的InGaP/GaAs功率HBT[J]. Journal of Semiconductors, 2005, In Press. 高功率附加效率的InGaP/GaAs功率HBT[J]. Chin. J. Semicond., 2005, 26(1): 92.Export: BibTex EndNote
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      高功率附加效率的InGaP/GaAs功率HBT[J]. Journal of Semiconductors, 2005, In Press.

      高功率附加效率的InGaP/GaAs功率HBT[J]. Chin. J. Semicond., 2005, 26(1): 92.
      Export: BibTex EndNote

      高功率附加效率的InGaP/GaAs功率HBT

      • Received Date: 2015-08-19

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