Chin. J. Semicond. > 1986, Volume 7 > Issue 5 > 551-554
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Pb_(0.88)Sn_(0.12)Te晶体退火引起的转型层特性及其在激光器制做上的应用

陈鹤明 , 曹根娣 , 朱筱春 , 张位在 and 王海龙

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(5): 551-554
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      • Received Date: 2015-08-20

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