J. Semicond. > 2008, Volume 29 > Issue 11 > 2204-2208

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A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer

Jin Boshi, Wu Qun, Yang Guohui, Meng Fanyi and Fu Jiahui

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Abstract: We propose a dual band CMOS power amplifier for mobile WiMAX systems.The power amplifier,combined with an active matching transformer,is fully integrated and fabricated in a 0.13μm CMOS process.The transformer operates at dual bands with active matching circuit.The measured result shows that the transformer efficiency of 78.2% and 70.4% at 2.5 and 3.5GHz are realized,respectively,and 26.5 and 24.8dB gain are achieved.The PAE reaches 20% and 28% at 2.5 and 3.5GHz,respectively.The third inter-modulation (IM3) is lower than -30dBc at the 25dBm average power.

Key words: RF CMOSpower amplifiertransformerWiMAX

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    Received: 18 August 2015 Revised: 19 June 2008 Online: Published: 01 November 2008

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      Jin Boshi, Wu Qun, Yang Guohui, Meng Fanyi, Fu Jiahui. A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer[J]. Journal of Semiconductors, 2008, In Press. Jin B S, Wu Q, Yang G H, Meng F Y, Fu J H. A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer[J]. J. Semicond., 2008, 29(11): 2204.Export: BibTex EndNote
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      Jin Boshi, Wu Qun, Yang Guohui, Meng Fanyi, Fu Jiahui. A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer[J]. Journal of Semiconductors, 2008, In Press.

      Jin B S, Wu Q, Yang G H, Meng F Y, Fu J H. A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer[J]. J. Semicond., 2008, 29(11): 2204.
      Export: BibTex EndNote

      A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer

      • Received Date: 2015-08-18
      • Accepted Date: 2008-06-19
      • Revised Date: 2008-06-19
      • Published Date: 2008-11-11

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