Chin. J. Semicond. > 2001, Volume 22 > Issue 4 > 440-445
|

CONTENTS

加压布里奇曼法生长大直径HgCdTe晶体

王跃 , 李全保 , 韩庆林 , 马庆华 , 宋炳文 , 介万奇 and 周尧和

+ Author Affiliations

PDF

Key words: 加压布里奇曼法, HgCdTe晶体, 二次配料工艺, 晶体结构完整性, 组分均匀性

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 2406 Times PDF downloads: 1025 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 April 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(4): 440-445
      Export: BibTex EndNote
      Citation:


      Export: BibTex EndNote
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return