| Citation: |
Gao Lihua, Yang Yunke, Chen Haixin, Fu Song. Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD[J]. Journal of Semiconductors, 2007, In Press.
Gao L H, Yang Y K, Chen H X, Fu S. Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD[J]. Chin. J. Semicond., 2007, 28(S1): 245.
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Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD
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Abstract
Computational fluid dynamics (CFD) simulation is performed three-dimensionally to study the flow field，gas phase reaction and growth rate in vertical metal organic chemical vapor deposition (MOCVD) reactor with rotating wafers for the growth of gallium nitride(GaN). The effects of wafers rotation，MOCVD reaction chamber height，ammonia influx and tem- perature distribution on the substrate surface are investigated which impact greatly on the flow field，gas phase reaction and the growth rate of GaN. The simulated results give some improvement suggestions to the operation parameters of the MOCVD reactor.-
Keywords:
- CFD,
- GaN,
- MOCVD,
- gas phase reaction,
- growth rate
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References
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Proportional views
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