Temperature Characteristics of AlGaN/GaN HEMTs Using C-Vand TLM for Evaluating Temperatures

Wang Chong; Zhang Jinfeng; Yang Yan; Hao Yue; Feng Qian

Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China

Article Navigation > Journal of Semiconductors > 2006 > 27(5): 864-868

Wang Chong, Zhang Jinfeng, Yang Yan, Hao Yue, Feng Qian. Temperature Characteristics of AlGaN/GaN HEMTs Using C-Vand TLM for Evaluating Temperatures[J]. Journal of Semiconductors, 2006, In Press. Wang C, Zhang J F, Yang Y, Hao Y, Feng Q. Temperature Characteristics of AlGaN/GaN HEMTs Using C-Vand TLM for Evaluating Temperatures[J]. Chin. J. Semicond., 2006, 27(5): 864.Export: BibTex EndNote

Citation:

Wang Chong, Zhang Jinfeng, Yang Yan, Hao Yue, Feng Qian. Temperature Characteristics of AlGaN/GaN HEMTs Using C-Vand TLM for Evaluating Temperatures[J]. Journal of Semiconductors, 2006, In Press.

Wang C, Zhang J F, Yang Y, Hao Y, Feng Q. Temperature Characteristics of AlGaN/GaN HEMTs Using C-Vand TLM for Evaluating Temperatures[J]. Chin. J. Semicond., 2006, 27(5): 864.

Export: BibTex EndNote

Citation:

Wang C, Zhang J F, Yang Y, Hao Y, Feng Q. Temperature Characteristics of AlGaN/GaN HEMTs Using C-Vand TLM for Evaluating Temperatures[J]. Chin. J. Semicond., 2006, 27(5): 864.

Export: BibTex EndNote

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Temperature Characteristics of AlGaN/GaN HEMTs Using C-Vand TLM for Evaluating Temperatures

Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China

Received Date: 2015-08-20

Abstract

Abstract

The DC characteristics of AlGaN/GaN HEMTs are measured in a temperature range from 25 to 200℃. On the same wafer, Schottky C-V and transmission line model measurements are carried out at different temperatures.The temperature dependence of the distribution of the two-dimensional electron gas,the sheet resistance,the ohmic specific contact resistance,and the buffer leakage current are analyzed.We conclude that the reduced saturation current is mainly due to the degradation of the electron transport property.The channel leakage current arises from the gate leakage current,and the leakage of the GaN buffer layer plays a secondary role.
- high electron mobility transistors,
- 2DEG,
- TLM,
- leakage current

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