Chin. J. Semicond. > 2000, Volume 21 > Issue 3 > 215-218
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Fabrication of Enhancement Mode GaN Metal- Insulator-Semiconductor Field Effect Transistor

陈鹏 , 张荣 , 周玉刚 , 罗志云 , 谢世勇 , 陈志忠 , 李卫平 and 郑有炓

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Key words: GaN

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(3): 215-218
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      • Received Date: 2015-08-20

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