Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 304-308

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Monte Carlo Simulation of Impurity Scattering Effect in Resonant-Phonon-Assisted Terahertz Quantum-Cascade Lasers

Cao Juncheng and Lü Jingtao

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Abstract: We study the influence of ionized impurity scattering on the electron transport in resonant-phonon-assisted terahertz (THz) quantum-cascade lasers (QCLs).We treat the ionized impurity scattering rates within the single subband static screening approximation.We find that the ionized impurity scattering supplies an additional current channel across the device,and affects the electrondistribution in different subbands.We conclude that the ionized impurity scattering should be taken into account in the study of the transport properties of resonant-phonon-assisted THz QCLs.

Key words: THz quantum-cascade laser Monte Carlo method

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2006

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      Cao Juncheng, Lü Jingtao. Monte Carlo Simulation of Impurity Scattering Effect in Resonant-Phonon-Assisted Terahertz Quantum-Cascade Lasers[J]. Journal of Semiconductors, 2006, In Press. Cao J C, Lü J. Monte Carlo Simulation of Impurity Scattering Effect in Resonant-Phonon-Assisted Terahertz Quantum-Cascade Lasers[J]. Chin. J. Semicond., 2006, 27(2): 304.Export: BibTex EndNote
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      Cao Juncheng, Lü Jingtao. Monte Carlo Simulation of Impurity Scattering Effect in Resonant-Phonon-Assisted Terahertz Quantum-Cascade Lasers[J]. Journal of Semiconductors, 2006, In Press.

      Cao J C, Lü J. Monte Carlo Simulation of Impurity Scattering Effect in Resonant-Phonon-Assisted Terahertz Quantum-Cascade Lasers[J]. Chin. J. Semicond., 2006, 27(2): 304.
      Export: BibTex EndNote

      Monte Carlo Simulation of Impurity Scattering Effect in Resonant-Phonon-Assisted Terahertz Quantum-Cascade Lasers

      • Received Date: 2015-08-20

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