Chin. J. Semicond. > 2005, Volume 26 > Issue S1 > 1-4

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Strain State of AlGaN

Zhang Jicai, Wang Jianfeng, Wang Yutian and Yang Hui

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Abstract: The strain state of AlxGa1-xN layers grown on GaN template is studied by Rutherford backscattering (RBS)/channeling and triple-axis X-ray diffraction measurements.The results show that the coherent factor of AlxGa1-xN layers increases almost linearly when x≤0.42 and reaches to 30% when x=0.42.Above 0.42,the value varies slowly and equals to 0 when x=1(AlN).In this work the underlying GaN layer is in compressive strain,which results in the reduction of lattice misfit between GaN and AlxGa1-xN,and a AlxGa1-xN layer with the composition of about 0.16 might be grown on GaN coherently.

Key words: high resolution X-ray diffractionAlGaNcoherent factorstrainRutherford backscattering/channeling

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Zhang Jicai, Wang Jianfeng, Wang Yutian, Yang Hui. Strain State of AlGaN[J]. Journal of Semiconductors, 2005, In Press. Zhang J C, Wang J F, Wang Y T, Yang H. Strain State of AlGaN[J]. Chin. J. Semicond., 2005, 26(13): 1.Export: BibTex EndNote
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      Zhang Jicai, Wang Jianfeng, Wang Yutian, Yang Hui. Strain State of AlGaN[J]. Journal of Semiconductors, 2005, In Press.

      Zhang J C, Wang J F, Wang Y T, Yang H. Strain State of AlGaN[J]. Chin. J. Semicond., 2005, 26(13): 1.
      Export: BibTex EndNote

      Strain State of AlGaN

      • Received Date: 2015-08-19

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