Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 179-181
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Band Gaps of Two-Dimensional Photonic Crystal Structure Using InP Films

Dang Suihu, Han Peide, Li Chunxia, Jia Wei, Chi Mei, Liu Xuguang and Xu Bingshe

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Abstract: The concept and method of analysis of photonic crystals and band gaps are introduced into InP-film network structure,which is treated theoretically as photonic crystals.We investigate different aspects of the absolute photonic band gap (PBG) formation for 2D photonic crystal (PC) consisting of air bars drilled into InP films. The formation of PBG is exhibited and confirmed by a calculation of the transfer matrix method(TMM).We find that for InP based networks for a lattice constant of 0.45a (a = 2250nm) two PBGs exist, which ranges are from 530 to 700nm and from 800 to 940nm at visible and near-infrared frequency.

Key words: InP films, TMM method, photonic crystals

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 179-181
      Dang Suihu, Han Peide, Li Chunxia, Jia Wei, Chi Mei, Liu Xuguang, Xu Bingshe. Band Gaps of Two-Dimensional Photonic Crystal Structure Using InP Films[J]. Journal of Semiconductors, 2007, In Press. Dang S H, Han P D, Li C X, Jia W, Chi M, Liu X G, Xu B S. Band Gaps of Two-Dimensional Photonic Crystal Structure Using InP Films[J]. Chin. J. Semicond., 2007, 28(S1): 179.Export: BibTex EndNote
      Citation:
      Dang Suihu, Han Peide, Li Chunxia, Jia Wei, Chi Mei, Liu Xuguang, Xu Bingshe. Band Gaps of Two-Dimensional Photonic Crystal Structure Using InP Films[J]. Journal of Semiconductors, 2007, In Press.

      Dang S H, Han P D, Li C X, Jia W, Chi M, Liu X G, Xu B S. Band Gaps of Two-Dimensional Photonic Crystal Structure Using InP Films[J]. Chin. J. Semicond., 2007, 28(S1): 179.
      Export: BibTex EndNote
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      Band Gaps of Two-Dimensional Photonic Crystal Structure Using InP Films

      • Key Laboratory of Interface Sience and Engineering in Advanced Materials of Taiyuan University of Technology， Ministry of Education，College of Materials Science and Engineering，Taiyuan University of Technology， Taiyuan 030024，China,Key Laboratory of Interface Sience and Engineering in Advanced Materials of Taiyuan University of Technology， Ministry of Education，College of Materials Science and Engineering，Taiyuan University of Technology， Taiyuan 030024，China,Key Laboratory of Interface Sience and Engineering in Advanced Materials of Taiyuan University of Technology， Ministry of Education，College of Materials Science and Engineering，Taiyuan University of Technology， Taiyuan 030024，China,Key Laboratory of Interface Sience and Engineering in Advanced Materials of Taiyuan University of Technology， Ministry of Education，College of Materials Science and Engineering，Taiyuan University of Technology， Taiyuan 030024，China,Key Laboratory of Interface Sience and Engineering in Advanced Materials of Taiyuan University of Technology， Ministry of Education，College of Materials Science and Engineering，Taiyuan University of Technology， Taiyuan 030024，China,Key Laboratory of Interface Sience and Engineering in Advanced Materials of Taiyuan University of Technology， Ministry of Education，College of Materials Science and Engineering，Taiyuan University of Technology， Taiyuan 030024，China and Key Laboratory of Interface Sience and Engineering in Advanced Materials of Taiyuan University of Technology， Ministry of Education，College of Materials Science and Engineering，Taiyuan University of Technology， Taiyuan 030024，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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