Journal of Semiconductors

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Volume 16, Issue 8, Aug 1995

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CONTENTS

像势对量子阱中类氢杂质Stark效应的影响

张向东，李有成，孙小均，魏成文

Chin. J. Semicond. 1995, 16(8): 561-566

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 561.

张向东，李有成，孙小均，魏成文. 像势对量子阱中类氢杂质Stark效应的影响[J]. Chin. J. Semicond., 1995, 16(8): 561..Export: BibTex EndNote

张向东，李有成，孙小均，魏成文. 像势对量子阱中类氢杂质Stark效应的影响[J]. Chin. J. Semicond., 1995, 16(8): 561...

纳米硅薄膜分形凝聚模型

林鸿溢，余卫武，武旭辉，何宇亮

Chin. J. Semicond. 1995, 16(8): 567-573

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 567.

林鸿溢，余卫武，武旭辉，何宇亮. 纳米硅薄膜分形凝聚模型[J]. Chin. J. Semicond., 1995, 16(8): 567..Export: BibTex EndNote

林鸿溢，余卫武，武旭辉，何宇亮. 纳米硅薄膜分形凝聚模型[J]. Chin. J. Semicond., 1995, 16(8): 567...

GaAs中过渡族杂质Pd和Zr有关的深中心

马红，杨锡震，周洁，卢励吾，封松林

Chin. J. Semicond. 1995, 16(8): 574-580

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 574.

马红，杨锡震，周洁，卢励吾，封松林. GaAs中过渡族杂质Pd和Zr有关的深中心[J]. Chin. J. Semicond., 1995, 16(8): 574..Export: BibTex EndNote

马红，杨锡震，周洁，卢励吾，封松林. GaAs中过渡族杂质Pd和Zr有关的深中心[J]. Chin. J. Semicond., 1995, 16(8): 574...

金属有机化学气相沉积GaAs／Si外延层中的深能级发光对温度的依赖关系

赵家龙，高瑛，刘学彦，苏锡安，梁家昌，高鸿楷，龚平，王海滨

Chin. J. Semicond. 1995, 16(8): 581-586

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null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 581.

赵家龙，高瑛，刘学彦，苏锡安，梁家昌，高鸿楷，龚平，王海滨. 金属有机化学气相沉积GaAs／Si外延层中的深能级发光对温度的依赖关系[J]. Chin. J. Semicond., 1995, 16(8): 581..Export: BibTex EndNote

赵家龙，高瑛，刘学彦，苏锡安，梁家昌，高鸿楷，龚平，王海滨. 金属有机化学气相沉积GaAs／Si外延层中的深能级发光对温度的依赖关系[J]. Chin. J. Semicond., 1995, 16(8): 581...

表面势阱对硅场发射的影响

黄庆安

Chin. J. Semicond. 1995, 16(8): 587-593

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 587.

黄庆安. 表面势阱对硅场发射的影响[J]. Chin. J. Semicond., 1995, 16(8): 587..Export: BibTex EndNote

黄庆安. 表面势阱对硅场发射的影响[J]. Chin. J. Semicond., 1995, 16(8): 587...

热壁外延制备的n－PbTe／p－Si异质结特性研究

杨玉琨，李文明，于磊，杨易，徐立兴，熊欣，王善力，黄和鸾

Chin. J. Semicond. 1995, 16(8): 594-597

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 594.

杨玉琨，李文明，于磊，杨易，徐立兴，熊欣，王善力，黄和鸾. 热壁外延制备的n－PbTe／p－Si异质结特性研究[J]. Chin. J. Semicond., 1995, 16(8): 594..Export: BibTex EndNote

杨玉琨，李文明，于磊，杨易，徐立兴，熊欣，王善力，黄和鸾. 热壁外延制备的n－PbTe／p－Si异质结特性研究[J]. Chin. J. Semicond., 1995, 16(8): 594...

低阈值基横模脊形波导GaAs／AlGaAs单量子阱激光器

徐遵图，杨国文，肖建伟，徐俊英，张敬明，郑婉华，瞿伟，陈良惠，毕可奎

Chin. J. Semicond. 1995, 16(8): 598-602

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null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 598.

徐遵图，杨国文，肖建伟，徐俊英，张敬明，郑婉华，瞿伟，陈良惠，毕可奎. 低阈值基横模脊形波导GaAs／AlGaAs单量子阱激光器[J]. Chin. J. Semicond., 1995, 16(8): 598..Export: BibTex EndNote

徐遵图，杨国文，肖建伟，徐俊英，张敬明，郑婉华，瞿伟，陈良惠，毕可奎. 低阈值基横模脊形波导GaAs／AlGaAs单量子阱激光器[J]. Chin. J. Semicond., 1995, 16(8): 598...

Ga－In－As－Sb系合金固－液平衡和人工神经网络预报

严六明，吴伟，张靖巍，陈念贻，彭瑞伍

Chin. J. Semicond. 1995, 16(8): 603-607

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 603.

严六明，吴伟，张靖巍，陈念贻，彭瑞伍. Ga－In－As－Sb系合金固－液平衡和人工神经网络预报[J]. Chin. J. Semicond., 1995, 16(8): 603..Export: BibTex EndNote

严六明，吴伟，张靖巍，陈念贻，彭瑞伍. Ga－In－As－Sb系合金固－液平衡和人工神经网络预报[J]. Chin. J. Semicond., 1995, 16(8): 603...

微氮硅中热施主和浅热施主的低温远红外研究

杨德仁，阙端麟

Chin. J. Semicond. 1995, 16(8): 608-610

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 608.

杨德仁，阙端麟. 微氮硅中热施主和浅热施主的低温远红外研究[J]. Chin. J. Semicond., 1995, 16(8): 608..Export: BibTex EndNote

杨德仁，阙端麟. 微氮硅中热施主和浅热施主的低温远红外研究[J]. Chin. J. Semicond., 1995, 16(8): 608...

非晶态发射极晶体管中发射结电流密度的横向分布

林绪伦，朱恩均

Chin. J. Semicond. 1995, 16(8): 611-617

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 611.

林绪伦，朱恩均. 非晶态发射极晶体管中发射结电流密度的横向分布[J]. Chin. J. Semicond., 1995, 16(8): 611..Export: BibTex EndNote

林绪伦，朱恩均. 非晶态发射极晶体管中发射结电流密度的横向分布[J]. Chin. J. Semicond., 1995, 16(8): 611...

硅片的抗弯强度及其测量

谢书银，石志仪

Chin. J. Semicond. 1995, 16(8): 618-622

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 618.

谢书银，石志仪. 硅片的抗弯强度及其测量[J]. Chin. J. Semicond., 1995, 16(8): 618..Export: BibTex EndNote

谢书银，石志仪. 硅片的抗弯强度及其测量[J]. Chin. J. Semicond., 1995, 16(8): 618...

Ⅰ类－Ⅱ类混合GaAs／AlAs量子阱中自由载流子散射导致的激子展宽

刘伟，罗克俭，江德生，张耀辉，杨小平

Chin. J. Semicond. 1995, 16(8): 623-626

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 623.

刘伟，罗克俭，江德生，张耀辉，杨小平. Ⅰ类－Ⅱ类混合GaAs／AlAs量子阱中自由载流子散射导致的激子展宽[J]. Chin. J. Semicond., 1995, 16(8): 623..Export: BibTex EndNote

刘伟，罗克俭，江德生，张耀辉，杨小平. Ⅰ类－Ⅱ类混合GaAs／AlAs量子阱中自由载流子散射导致的激子展宽[J]. Chin. J. Semicond., 1995, 16(8): 623...

高质量GaAs－AlGaAs材料MBE生长研究及其应用

杨国文，肖建伟，徐遵图，郑婉华，曾一平，徐俊英，张敬明，陈良惠

Chin. J. Semicond. 1995, 16(8): 627-631

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 627.

杨国文，肖建伟，徐遵图，郑婉华，曾一平，徐俊英，张敬明，陈良惠. 高质量GaAs－AlGaAs材料MBE生长研究及其应用[J]. Chin. J. Semicond., 1995, 16(8): 627..Export: BibTex EndNote

杨国文，肖建伟，徐遵图，郑婉华，曾一平，徐俊英，张敬明，陈良惠. 高质量GaAs－AlGaAs材料MBE生长研究及其应用[J]. Chin. J. Semicond., 1995, 16(8): 627...

Si_（1－x）Ge_x合金的浅杂质光电导谱

石晓红，陈忠辉，黄醒良，史国良，刘普霖，沈学础

Chin. J. Semicond. 1995, 16(8): 632-635

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 632.

石晓红，陈忠辉，黄醒良，史国良，刘普霖，沈学础. Si_（1－x）Ge_x合金的浅杂质光电导谱[J]. Chin. J. Semicond., 1995, 16(8): 632..Export: BibTex EndNote

石晓红，陈忠辉，黄醒良，史国良，刘普霖，沈学础. Si_（1－x）Ge_x合金的浅杂质光电导谱[J]. Chin. J. Semicond., 1995, 16(8): 632...

形成SIMOX结构的PIII新技术的研究

闵靖, P.K.Chu, Y.C.Cheng, J.B.Liu, S.Iyer, N.W.Cheung

Chin. J. Semicond. 1995, 16(8): 636-640

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(8): 636.

闵靖, P.K.Chu, Y.C.Cheng, J.B.Liu, S.Iyer, N.W.Cheung. 形成SIMOX结构的PIII新技术的研究[J]. Chin. J. Semicond., 1995, 16(8): 636..Export: BibTex EndNote

闵靖, P.K.Chu, Y.C.Cheng, J.B.Liu, S.Iyer, N.W.Cheung. 形成SIMOX结构的PIII新技术的研究[J]. Chin. J. Semicond., 1995, 16(8): 636...

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